jan. 2000 in7 ? ? o7 7 10 in5 ? ? o5 5 12 input output in4 ? ? o4 4 13 in3 ? ? o3 3 14 in2 ? ? o2 2 15 1 in1 ? ? o1 16 gnd 9 8 in6 ? ? o6 6 11 ? com common 16p2s-a package type pin configuration mitsubishi semiconductor M54525AGP 7-unit 500ma darlington transistor-array with clamp diode description M54525AGP is seven-circuit darlington transistor array with clamping diodes. the circuits are made of npn transistors. both the semiconductor integrated circuits perform high-cur- rent driving with extremely low input-current supply. features l high breakdown voltage (bv ceo 3 50v) l high-current driving (i c(max ) = 500ma ) l with clamping diodes l driving available with pmos ic output of 24v l wide operating temperature range (ta = C40 to +85 c) application drives of relays and printers, digit drives of indication ele- ments (leds and lamps), and mos-bipolar logic ic inter- faces function the M54525AGP has seven circuits consisting of npn darlington transistors. this ic has resistance of 10.5k w and zener diode between input transistor bases and input pins. a spike-killer clamping diode is provided between each out- put pin (collector) and com pin (pin 9). the output transistor emitters are all connected to the gnd pin (pin 8). the col- lector current is 500ma maximum. collector-emitter supply voltage is 50v maximum. the M54525AGP is enclosed in molded small flat package, enabling space-saving design. circuit diagram unit: w the seven circuits share com and gnd. the diode, indicated with the dotted line, parasitic, and cannot be used. input output gnd 10.5k 3k 5k com vz=7v collector-emitter voltage collector current input voltage clamping diode forward current clamping diode reverse voltage power dissipation operating temperature storage temperature v ma v ma v w c c C0.5 ~ +50 500 C0.5 ~ +30 500 50 0.80 C40 ~ +85 C55 ~ +125 ratings symbol parameter conditions unit absolute maximum ratings (unless otherwise noted, ta = C40 ~ +85 c) output, h current per circuit output, l ta = 25 c, when mounted on board v ceo i c v i i f v r p d t opr t stg
jan. 2000 ton toff 50% 50% 50% 50% input output (1)pulse generator (pg) characteristics : prr = 1khz, tw = 10 m s, tr = 6ns, tf = 6ns, zo = 50 w , v ih = 17v (2)input-output conditions : r l = 25 w , vo = 10v (3)electrostatic capacity c l includes floating capacitance at connections and input capacitance at probes pg 50 w r l output input vo c l open measured device mitsubishi semiconductor M54525AGP 7-unit 500ma darlington transistor-array with clamp diode recommended operating conditions (unless otherwise noted, ta = C40 ~ +85 c) timing diagram note 1 test circuit ns ns 5 100 symbol unit parameter test conditions limits min typ max turn-on time turn-off time t on t off c l = 15pf (note 1) switching characteristics (unless otherwise noted, ta = 25 c) parameter 0 17 0 limits min typ max symbol unit 0 0 v o output voltage h input voltage l input voltage duty cycle no more than 4% duty cycle no more than 15% collector current (current per 1 cir- cuit when 7 circuits are coming on si- multaneously) i c v ih v il 50 400 200 25 6 v ma v v 1.2 1.0 0.9 0.8 1.3 2000 50 1000 v (br) ceo i i v f i r h fe v v ma v m a 1.6 1.3 1.1 1.3 2.0 100 symbol unit parameter test conditions limits min typ max collector-emitter breakdown voltage input current clamping diode forward voltage clamping diode reverse current dc amplification factor i ceo = 100 m a i i = 500 m a, i c = 350ma i i = 350 m a, i c = 200ma i i = 250 m a, i c = 100ma v i = 17v i f = 350ma v r = 50v v ce = 2v, i c = 350ma v ce(sat) collector-emitter saturation voltage electrical characteristics (unless otherwise noted, ta = 25 c)
jan. 2000 mitsubishi semiconductor M54525AGP 7-unit 500ma darlington transistor-array with clamp diode typical characteristics thermal derating factor characteristics ambient temperature ta ( c) power dissipation pd (w) output saturation voltage collector current characteristics output saturation voltage v ce(sat) (v) collector current ic (ma) duty cycle-collector characteristics duty cycle-collector characteristics duty cycle (%) collector current ic (ma) duty cycle (%) collector current ic (ma) dc amplification factor collector current characteristics collector current ic (ma) dc amplification factor h he grounded emitter transfer characteristics input voltage v i (v) collector current ic (ma) 1 2 3 4 5 6 7 1.0 0.8 0.6 0.2 0 0 25 50 75 100 85 0.416 0.4 400 300 200 100 0 0 0.5 1.0 1.5 2.0 ta = ?0 c ta = 25 c ta = 85 c 500 i i = 500 m a 500 400 300 200 100 0 0 100 20 40 60 80 1 2 3 4 5 6 7 the collector current values represent the current per circuit. repeated frequency 3 10hz the value the circle represents the value of the simultaneously-operated circuit. ta = 25 c 500 400 300 200 100 0 0 100 20 40 60 80 10 1 10 2 10 3 10 2 10 3 10 4 23 57 23 57 2 3 5 7 2 3 5 7 v ce = 2v ta = 25 c ta = ?0 c ta = 85 c 0 0 24 810 400 300 200 100 0 500 ta = 25 c ta = ?0 c ta = 85 c 6121416 v ce = 2v the collector current values represent the current per circuit. repeated frequency 3 10hz the value the circle represents the value of the simultaneously-operated circuit. ta = 85 c
jan. 2000 mitsubishi semiconductor M54525AGP 7-unit 500ma darlington transistor-array with clamp diode input characteristics input voltage v i (v) input current i i (ma) clamping diode characteristics forward bias voltage v f (v) forward bias current i f (ma) 3 2 1 0 0 5 10 15 25 20 ta = 85 c 30 ta = 25 c ta = ?0 c 0 0.5 1.0 1.5 2.0 500 400 300 200 100 0 ta = ?0 c ta = 25 c ta = 85 c
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